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| Результаты поиска для 61D | |
| Компонент | Описание | Производитель | PDF | Buy |
| MY61D | SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE | Micro Electronics |  |  |
| MO61D | SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE | Micro Electronics | | |
| MR61D | SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE | Micro Electronics | | |
| MS61D | SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE | Micro Electronics | | |
| MG61D | SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE | Micro Electronics | | |
| A-361D | SURGE ABSORBER | Okaya Electric America, Inc. | | |
| 1N961D | 0.5W SILICON ZENER DIODES | Jinan Gude Electronic Device | | |
| 1N961D | METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION | Microsemi Corporation | | |
| 1N961D | 1N9 SERIES ZENER DIODES | Leshan Radio Company | | |
| 1N961D | Silicon 500 mW Zener Diodes | Microsemi Corporation | | |
| BCW61D | PNP general purpose transistors | NXP Semiconductors | | |
| BCW61D | PNP EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor | | |
| BCW61D | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group | | |
| BCW61D | PNP EPITAXIAL SILICON TRANSISTOR | Fairchild Semiconductor | | |
| BCW61D | PNP Silicon AF Transistor | Infineon Technologies AG | | |
| BCW61D | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor | | |
| BCW61D | SURFACE MOUNT PNP SILICON TRANSISTOR | Central Semiconductor Corp | | |
| BCW61D | General Purpose Transistor | Fairchild Semiconductor | | |
| BCW61D | Surface Mount General Purpose Si-Epi-Planar Transistors | Diotec Semiconductor | | |
| BCW61D | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) | Rectron Semiconductor | | |
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